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NTMS4916N
Power MOSFET
30 V, 11.6 A, N ? Channel, SO ? 8
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? Optimized for 5 V, 12 V Gate Drives
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? DC ? DC Converters
? Printers
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
30 V
http://onsemi.com
R DS(ON) MAX
9 m W @ 10 V
12 m W @ 4.5 V
N ? Channel
I D MAX
11.6 A
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Symbol
V DSS
V GS
Value
30
± 20
Unit
V
V
D
Continuous Drain
Current R q JA (Note 1)
Power Dissipation R q JA
(Note 1)
Steady
State
Steady
State
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
I D
P D
9.4
7.5
1.30
A
W
G
S
T A = 70 ° C
Source Drain
Source Drain
Gate Drain
Continuous Drain
Current R q JA (Note 2)
Power Dissipation R q JA
(Note 2)
Continuous Drain
Current R q JA , t v 10 s
(Note 1)
Power Dissipation
R q JA , t v 10 s(Note 1)
Pulsed Drain Current
Steady T A = 25 ° C
State
T A = 25 ° C
Steady T A = 25 ° C
State
T A = 70 ° C
Steady T A = 25 ° C
State
T A = 25 ° C, t p = 10 m s
I D
P D
I D
P D
I DM
7.8
6.2
0.89
11.6
9.3
1.98
145
A
W
A
W
A
MARKING DIAGRAM/
PIN ASSIGNMENT
1 8
1 Source Drain
SO ? 8
CASE 751
STYLE 12
Top View
4916N = Device Code
A = Assembly Location
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain ? to ? Source Avalanche Energy
(T J = 25 ° C, V DD = 30 V, V GS = 10 V,
I L = 9 A pk , L = 1.0 mH, R G = 25 W )
T J ,
T stg
I S
E AS
? 55 to
150
2.5
40.5
° C
A
mJ
Y = Year
WW = Work Week
G = Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Device Package Shipping ?
NTMS4916NR2G SO ? 8 2500/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Junction ? to ? Ambient – Steady State (Note 1)
Junction ? to ? Ambient – t v 10 s (Note 1)
Junction ? to ? Foot (Drain)
Junction ? to ? Ambient – Steady State (Note 2)
R q JA
R q JA
R q JF
R q JA
96
63
24.5
141
° C/W
1. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
? Semiconductor Components Industries, LLC, 2010
April, 2010 ? Rev. 0
1
Publication Order Number:
NTMS4916N/D
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